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2020 – today
- 2023
[c14]Alexander Kloes, Mike Schwarz, Yi Han, Qing-Tai Zhao, Christian Römer:
Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors. MIXDES 2023: 31-36- [c13]Yi Han, Jingxuan Sun
, Jin Hee Bae, Detlev Grützmacher, Joachim Knoch, Qing-Tai Zhao:
High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c12]Melvin Galicia, Stephan Menzel, Farhad Merchant, Maximilian Müller, Hsin-Yu Chen, Qing-Tai Zhao, Felix Cüppers, Abdur R. Jalil, Qi Shu, Peter Schüffelgen, Gregor Mussler, Carsten Funck, Christian Lanius, Stefan Wiefels, Moritz von Witzleben, Christopher Bengel, Nils Kopperberg, Tobias Ziegler, R. Walied Ahmad, Alexander Krüger, Letícia Maria Bolzani Pöhls, Regina Dittmann, Susanne Hoffmann-Eifert, Vikas Rana, Detlev Grützmacher, Matthias Wuttig, Dirk J. Wouters, Andrei Vescan, Tobias Gemmeke, Joachim Knoch, Max Christian Lemme, Rainer Leupers, Rainer Waser:
NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future. DATE 2022: 957-962 - [c11]Fengben Xi, Andreas Grenmy, Jiayuan Zhang, Yi Han, Jin Hee Bae, Detlev Grützmacher, Qing-Tai Zhao:
Ferroelectric Schottky Barrier MOSFET as Analog Synapses for Neuromorphic Computing. ESSCIRC 2022: 121-124 - [c10]Yannik Junk, Marvin Frauenrath, Yi Han, Omar Concepción Diaz, Jin-Hee Bae, Jean-Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing-Tai Zhao:
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs. ESSDERC 2022: 364-367 - [c9]Christopher Bengel, Stefan Wiefels, Vikas Rana, Hsin-Yu Chen, Qing-Tai Zhao, Rainer Waser, Henriette Padberg, Fengben Xi, Stephan Menzel:
Experimental and Theoretical Analysis of Stateful Logic in Passive and Active Crossbar Arrays for Computation-in-Memory. ISCAS 2022: 2792-2796 - 2021
- [c8]Fengben Xi, Yi Han, Andreas T. Tiedemann, Detlev Grützmacher, Qing-Tai Zhao:
4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses. ESSDERC 2021: 291-294
2010 – 2019
- 2017
- [c7]Gia Vinh Luong, Sebastiano Strangio, Andreas T. Tiedemann, Patric Bernardy, Stefan Trellenkamp, Pierpaolo Palestri, Siegfried Mantl, Qing-Tai Zhao:
Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. ESSDERC 2017: 42-45 - [c6]Qinghua Han, Anran Gao, Keyvan Narimani, Yuelin Wang, Tie Li, Siegfried Mantl, Qing-Tai Zhao:
Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor. ESSDERC 2017: 268-271 - 2016
- [c5]Chang Liu, Qinghua Han, Gia Vinh Luong, Keyvan Narimani, Stefan Glass, Andreas T. Tiedemann, Stefan Trellenkamp, Wenjie Yu, Xi Wang, Siegfried Mantl, Qing-Tai Zhao:
Si n-TFETs on ultra thin body with suppressed ambipolarity. ESSDERC 2016: 408-411 - [c4]Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes:
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. ESSDERC 2016: 456-459 - 2014
- [c3]Christian Schulte-Braucks, Simon Richter, Lars Knoll, Luca Selmi, Qing-Tai Zhao, Siegfried Mantl:
Experimental demonstration of improved analog device performance in GAA-NW-TFETs. ESSDERC 2014: 178-181 - 2013
- [c2]Simon Richter, Svetlana A. Vitusevich, Sergii Pud, Jing Li, Lars Knoll, Stefan Trellenkamp, Anna Schäfer, Steffi Lenk, Qing-Tai Zhao, Andreas Offenhäusser, Siegfried Mantl, Konstantin K. Bourdelle:
Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs. ESSDERC 2013: 256-259 - 2012
- [c1]Lars Knoll, Qing-Tai Zhao, Stefan Trellenkamp, Anna Schäfer, K. K. Bourdelle, Siegfried Mantl:
Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions. ESSDERC 2012: 183-156
Coauthor Index
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