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ORCIDYasuyuki Miyamoto
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2020 – today
- 2022
[c2]Kozo Makiyama, Shigeki Yoshida, Ken Nakata, Yasuyuki Miyamoto:
Innovative RF Device Technologies for Advanced Information and Communications Network Society. BCICTS 2022: 17-20- 2020
- [j14]Yasuyuki Miyamoto, Takahiro Gotow:
Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer. IEICE Trans. Electron. 103-C(6): 304-307 (2020)
2010 – 2019
- 2019
- [c1]Tomohiro Amemiya, Tomoya Yoshida, Yuki Atsumi, Nobuhiko Nishiyama, Yasuyuki Miyamoto, Youichi Sakakibara, Shigehisa Arai:
Orbital Angular Momentum Mux/Demux Module using Vertically Curved Si Waveguides. OFC 2019: 1-3 - 2018
- [j13]Seiko Netsu, Toru Kanazawa, Teerayut Uwanno
, Tomohiro Amemiya, Kosuke Nagashio, Yasuyuki Miyamoto:
Type-II HfS2/MoS2 Heterojunction Transistors. IEICE Trans. Electron. 101-C(5): 338-342 (2018) - 2017
- [j12]Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto:
Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation. IEICE Trans. Electron. 100-C(5): 453-457 (2017) - 2016
- [j11]Yasuyuki Miyamoto:
Recent progress in compound semiconductor electron devices. IEICE Electron. Express 13(18): 20162002 (2016) - 2014
- [j10]Kazuto Ohsawa, Atsushi Kato, Toru Kanazawa, Eiji Uehara, Yasuyuki Miyamoto:
Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density. IEICE Electron. Express 11(14): 20140567 (2014) - [j9]Masayuki Yamada, Ken Uchida, Yasuyuki Miyamoto:
Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance. IEICE Trans. Electron. 97-C(5): 419-422 (2014) - 2012
- [j8]Atsushi Kato, Toru Kanazawa, Shunsuke Ikeda, Yoshiharu Yonai, Yasuyuki Miyamoto:
Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode. IEICE Trans. Electron. 95-C(5): 904-909 (2012) - [j7]Naoaki Takebe, Yasuyuki Miyamoto:
Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires. IEICE Trans. Electron. 95-C(5): 917-920 (2012) - [j6]Yutaro Yamaguchi, Takeshi Sagai, Yasuyuki Miyamoto:
Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process. IEICE Trans. Electron. 95-C(8): 1323-1326 (2012) - 2011
- [j5]Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya:
Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires. IEICE Trans. Electron. 94-C(5): 830-834 (2011) - 2010
- [j4]Yasuyuki Miyamoto, Shinnosuke Takahashi, Takashi Kobayashi, Hiroyuki Suzuki, Kazuhito Furuya:
Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector. IEICE Trans. Electron. 93-C(5): 644-647 (2010)
2000 – 2009
- 2007
- [j3]Kazuya Nishihori, Yasuyuki Miyamoto:
Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs. IEICE Trans. Electron. 90-C(8): 1643-1649 (2007) - 2006
- [j2]Yasuyuki Miyamoto, Ryo Nakagawa, Issei Kashima, Masashi Ishida, Nobuya Machida, Kazuhito Furuya:
Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer. IEICE Trans. Electron. 89-C(7): 972-978 (2006)
1990 – 1999
- 1995
- [j1]Yutaka Yokoyama, Yasuyuki Miyamoto, Mutsumi Ohta:
Very low bit rate video coding using arbitrarily shaped region-based motion compensation. IEEE Trans. Circuits Syst. Video Technol. 5(6): 500-507 (1995)
Coauthor Index
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