Submicron electron‐beam lithography for the direct exposure of wafers and for the
fabrication of masks cannot be successful until the incident electron exposure can be
properly adjusted to compensate the proximity effects. A self‐consistent proximity effect
correction technique for resist exposure (SPECTRE) has been developed to compute, for
any given pattern, the corrections to the incident electron exposure which must be applied in
order to obtain''uniform''absorbed (incident plus backscattered) exposure in the resist …