http://hdl.handle.net/11693/27028
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http://hdl.handle.net/11693/27028
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Asset Name:
Elements of nanocrystal high-field carrier transport modeling
Title:
Elements of nanocrystal high-field carrier transport modeling
Author:
Sevik, C.
Bulutay, C.
Subject:
Ab initio band structures
Auger processes
Fermi's Golden Rule
High fields
High-field transport
International conferences
Monte Carlo
Nano-devices
Oxide materials
Pseudo potentials
Semiconductor nanocrystals
Solar-cell applications
Transport modelling
Transport simulations
Wide band gaps
Civil aviation
Direct energy conversion
Nanocrystalline alloys
Nanocrystals
Nanostructured materials
Nanostructures
Nanotechnology
Semiconductor materials
Solar energy
Impact ionization
Description:
Embedded semiconductor nanocrystals (NCs) within wide bandgap oxide materials are being considered for light emission and solar cell applications. One of the fundamental issues is the high-field transport in NCs. This requires the combination of a number of tools: ensemble Monte Carlo carrier transport simulation, ab initio band structure of the bulk oxide, Fermi's golden rule modeling of impact ionization and Auger processes and the pseudopotential-based atomistic description of the confined NC states. These elements are outlined in this brief report. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Date:
2016-02-08T11:42:19Z
2007
Type:
| Conference Paper |
Digital Format:
application/pdf
Identifier:
18626351
http://hdl.handle.net/11693/27028
10.1002/pssc.200673327
Source:
http://dx.doi.org/10.1002/pssc.200673327
Media Type: