English: The probability of stochastic failure is plotted vs. pitch for 20 nm space widths at an EUV dose of ~30 mJ/cm2.[1] Points below 0.5 ppm are extrapolated. When the distance between exposed 20 nm spaces exceeds about 25-30 nm, the failure probability starts to increase. There is a contribution from secondary electron straggling in the ~20 nm range.[2]
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