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Insulated-gate bipolar transistor: Revision history


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28 August 2024

  • curprev 07:1207:12, 28 August 2024Citation bot talk contribs 37,897 bytes +87 Altered journal. Add: isbn, doi, pages, bibcode, doi-broken-date, authors 1-1. Removed URL that duplicated identifier. Removed parameters. Some additions/deletions were parameter name changes. | Use this bot. Report bugs. | Suggested by Headbomb | Linked from Wikipedia:WikiProject_Academic_Journals/Journals_cited_by_Wikipedia/Maintenance/Miscapitalisations | #UCB_webform_linked 284/2411 undo

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  • curprev 21:4621:46, 6 January 2023Rchedraui talk contribs 32,536 bytes −88 Removed incorrect image: the device shown is a solid state relay, based on TRIAC semiconductors and used for completely different applications than IGBT modules. These relays are typically used for resistive loads and switched at extremely low speeds ( <1Hz). undo Tag: Reverted

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