Tetrode transistor: Difference between revisions

*Dual collector transistor, used in two output [[integrated injection logic]] gates.

*[[planar transistor|Diffused planar silicon bipolar junction transistor]],<ref>{{US patent|4143421}} - ''Tetrode transistor memory logic cell'', March 6, 1979. Filed September 6, 1977.</ref> used in some [[integrated circuit]]s. This transistor, apart from the three electrodes, emitter, base and collector, has a fourth electrode or grid made of conducting material placed near the emitter-base junction from which it is insulated by a silica layer.

 

==References==