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2 Results for: Keyword: JLTFET
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- research-articleDecember 2022
Impact of band gap and gate dielectric engineering on novel Si0.1Ge0.9-GaAs lateral N-type charge plasma based JLTFET
Microelectronics Journal (MICROJ), Volume 130, Issue Chttps://doi.org/10.1016/j.mejo.2022.105610AbstractIn this research article, a device called dual dielectric gate hetero-material junctionless TFET (DD-HJLTFET) is proposed using a novel amalgamation of Si0.1Ge0.9/GaAs for the first time and investigated by a Silvaco -ATLAS simulator ...
- articleMarch 2017
Heterogate junctionless tunnel field-effect transistor: future of low-power devices
Journal of Computational Electronics (SPJCE), Volume 16, Issue 1Pages 30–38https://doi.org/10.1007/s10825-016-0936-9Gate dielectric materials play a key role in device development and study for various applications. We illustrate herein the impact of hetero (high-k/low-k) gate dielectric materials on the ON-current ($$I_{\mathrm{ON}}$$ION) and OFF-current ($$I_{\...
